e2v signs GaN deal to cut weight in hi-rel designs

e2v has signed a supply agreement with gallium nitride power transistor manufacturer GaN Systems which will see the UK firm supplying power transistors to the aerospace and defence sectors.

e2v specialises in supplying the hi-rel markets with semiconductors and evaluation boards.

According to Mont Taylor, vice-president of business development at e2v:

“Our aerospace and defence customers must increase system power density, while reducing size and weight. This global partnership with GaN Systems allows us to extend our A&D portfolio and offer new power technologies to meet these requirements.”

The supplier believes the availability of GaN components can help meet the need for size and weight reduction in the design of power electronic systems.

Larry Spaziani, vice-president of sales and marketing at GaN Systems, believes that the volume and weight of power system design can be reduced “by 4 to 6 times by using gallium nitride transistors as a replacement for silicon devices”.

Mont Taylor, vp of business development at e2v, added, “Our A&D customers must increase system power density, while reducing size and weight. This global partnership with GaN Systems allows us to extend our A&D portfolio and offer new power technologies to meet these requirements.”

See also:

E2v super ADC is “free of non-harmonic spurs”

e2v launches high-rel e500v2 PowerPCs

UK firm claims highest density MRAM device